EFFECTS OF TEMPERATURE ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2O THIN FILMs DEPOSITED BY CVD METHOD FROM COPPER(II) ACETYLACETONATE PRECUSOR

Abstract

   The Cu2O thin films were prepared on glass substrate by chemical vapour deposition method. The influences of deposited temperature on the structural, optical and electrical properties of deposited films were investigated by XRD, SEM, UV-VIS spectra and Hall Effect measurement. The X-ray diffraction results show that Cu2O thin films have polycrystalline structure. It is also found that the (200) and (111) preferred Cu2O films can be modified by changing substrate temperature. The bandgap of Cu2O films deposited at 240, 280 and 320oC is found to be 2,59 eV, 2,59 eV and 2,57 eV, respectively. Cu2O film deposited at 240oC has carrier concentration of 5,1721013 cm-3, Hall mobility of 85,44 cm2/Vs and resistivity of 1.413x10³