APPLICATIONS OF TCAD SIMULATION SOFTWARE TO THE STUDY OF FLOATING-GATE DEVICE

  • Dang Cong Thinh Ho Chi Minh City University of Technology
  • Mai Tri Hao Ho Chi Minh University of Technology
  • Hoang Trang Ho Chi Minh University of Technology
Keywords: Floating-gate device, Non-volatile memory, flash memory, Channel Hot Electron Injection, Fowler-Nordheim Tunnel, CMOS Process, TCAD

Abstract

The floating-gate device has become an established component of all electronic systems, especially Non-volatile memories in recent years. This paper produces a study for this device including the structure and operation (read, program/write and erase). A complete flow which uses ATHENA, ATLAS and DEVEDIT3D tools for 2D and 3D structure simulations including I-V characteristics, Channel Hot Electron Injection, and Fowler-Nordheim Tunnel simulations are performed in TCAD environment.Floating-gate device

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Published
2021-05-17
Issue
Vol. 8 No. 02 (2019)
Section
Bài viết