VAPOR-LIQUID-SOLID METHOD FOR SYNTHESIZING Ga2O3 ON GaAs (100) SUBSTRATE USING Ag NANOPARTICLES CATALYST

Abstract

Ga2O3/GaAs (100) nanowires were synthesized by the vapor-liquid-solid (VLS)
method, using Ag nanoparticles as a catalyst with two annealing processes of T1 and T2.
The Ag nanoparticles were deposited on GaAs (100) with a diameter ranging from 30 -
70nm, using precursors of AgNO3 and HF solution by employing the co-precipitation
approach. As working pressure of 10–3
Torr and at the T2 from 750 - 820o
C, Ga2O3
nanowires were grown with a 35 - 45nm of diameter and lengths ranging from several
tens of nm to a few hundred µm, which strongly depends on the pre-Ag nanoparticles
and growth time. The results showed the excellent nanowire quality of as-synthesized
morphology, structure, and element characterizations. Beyond this finding, we suggest
an Ag nanoparticle catalyst to grow semiconductor nanowires for nanodevices.