A 6.8 ppm/oC BANDGAP VOLTAGE REFERENCE IN 180 nm CMOS PROCESS

Abstract

This paper presents the design of a bandgap voltage reference (BGR) circuit independent on process, temperature and voltage (PVT) for electronic circuits that require a high precision reference voltage integrated on the chip. The proposed BGR circuit achieves low temperature coefficient (TC) by combining an operational amplifier (OPA) with high gain and output voltage trimming technique. In addition, the OPA circuit is designed including inside bias circuit, thus increasing the ability to integrate on the chip. The proposed BGR circuit is implemented in a 180 nm CMOS process. The simulation results illustrate that the BGR generates a stable reference voltage of 0.6 V and a power consumption of 54.36 µW with a supply voltage of 1.8 V. The average temperature coefficient achieved is 6.8 ppm/^oC for the wide temperature range from -40^oC to 125^oC and the line regulation performance is 0.12 %/V. The power supply rejection ratio at 1 kHz, 100 kHz and 10 MHz are 51.3 dB, 32.4 dB and 20.1 dB, respectively.