APPLYING OPTICAL BEAM-INDUCED CURRENT IN THE CHARACTERIZATION OF SEMICONDUCTOR POWER DIODES

Abstract

Optical Beam-Induced Current (OBIC) is a technique that measures a photocurrent in response to a laser beam with appropriate wavelength that is scanned over the surface of a semiconductor device. In this way, a number of important device parameters can be derived. This paper deals with the principle of OBIC and its application for characterization of silicon carbide (SiC) power diodes.