PERFORMANCE EVALUATION OF 3-LEVEL VIENNA RECTIFIER WITH SIC/GAN SEMICONDUCTOR DEVICES AND CIRCUIT FAULT TOLERANCE

Abstract

The Wide-gap semiconductor materials, such as SiC and GaN, are now very popular with high efficiency converter designs. In fact, the integration of these semiconductor devices can achieve a much higher level of density and energy efficiency than using the previous generation of siliconbased semiconductor devices. This paper evaluates the 3-Level VIENNA high frequency PWM control using SiC and GaN semiconductor in which MOSFET SiC will be considered as the priority. Furthermore, research results on fault tolerance of converter as well as solutions to protect circuits are also proposed and presented. Calculations and simulations using PSIM software confirm the effectiveness of the converter as well as the proposed protection solution.